Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
We can all agree that an extra layer of protection is always a welcome option when securing our devices. However, modern methods that require you to insert a physical security key into the USB port ...
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